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BDT60C
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New Jersey Semiconductor
BDT60C Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
PNP SILICON POWER DARLINGTONS
• Designed for Complementary Use with BDT60, BDT60A, BDT60B and BDT60C
• 50 W at 25 °C Case Temperature
• 4 A Continuous Collector Current
• Minimum hFE of 750 at 1.5 V, 3 A
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