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BD726 Hoja de datos - New Jersey Semiconductor
Fabricante

New Jersey Semiconductor
DESCRIPTION
• DC Current Gain-
: hFE= 40@ IC= -0.5A
• Collector-Emitter Breakdown Voltage -
: V(BR)CEO= -120V(Min)
• Complement to type BD725
APPLICATIONS
• Designed for use in audio output and general purpose
amplifier applications.
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Fabricante
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New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor
Silicon PNP PowerTransistor
New Jersey Semiconductor