Número de pieza
BD646
componentes Descripción
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Inchange Semiconductor
BD646 Hoja de datos - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min)
• High DC Current Gain : hFE= 750(Min) @IC= -3A
• Low Saturation Voltage
• Complement to Type BD645
APPLICATIONS
• Designed for use as complementary AF push-pull output stage applications
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