Número de pieza
BD311
componentes Descripción
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Fabricante
New Jersey Semiconductor
BD311 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 25(Min.)@lc = 5A
• Collector-Emitter Saturation Voltage-
: VCE(sat)=1.0V(Max)@lc = 5A
• Complement to Type BD312
APPLICATIONS
• Designed for high quality amplifiers operating
into 4 ohm load.
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