BD277 Hoja de datos - GE Solid State
Fabricante

GE Solid State
7-A, 70-W, Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
For Applications in Series and Shunt Regulators
FEATUREs:
■ Maximum safe-area-of-operation curves
■ Low saturation voltage
■ How power-dissipation capability
Número de pieza
componentes Descripción
Ver
Fabricante
Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
Unspecified
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
New Jersey Semiconductor
Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors ( Rev : V2 )
New Jersey Semiconductor
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
GE Solid State
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
Intersil
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors
General Semiconductor
Silicon N-P-N VERSAWATT Transistors
GE Solid State
SILICON N-P-N VERSAWATT TRANSISTORS
GE Solid State
High-Current, Silicon N-P-N VERSAWATT Transistors
New Jersey Semiconductor
High-Current, Silicon N-P-N VERSAWATT Transistors
New Jersey Semiconductor