Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier

FEATUREs
•  Build in Biasing Circuit; To reduce using parts cost & PC board space.
•  Superior cross modulation characteristics.
•  High gain;
   (PG = 28 dB typ. at f = 200 MHz)
•  Wide supply voltage range; Applicable with 5V to 9V supply voltage.
•  Withstanding to ESD;
    Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
•  Provide mini mold packages; MPAK-4R(SOT-143 var.)