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BB402M PDF
BB402M Hoja de datos - Hitachi -> Renesas Electronics
Fabricante
Hitachi -> Renesas Electronics
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics; (NF = 1.7 dB typ. at f = 200 MHz)
• Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
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Fabricante
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
Hitachi -> Renesas Electronics
