BAV23S_ Hoja de datos - Fairchild Semiconductor
Fabricante
Fairchild Semiconductor
HIGH VOLTAGE GENERAL PURPOSE DIODE
PD . . . .350 mW @ TA = 25 Deg C
BV . . . .250 V (MIN) @ IR = 100 uA
TRR . . . 50 nS @ IF=IR = 30 mA IRR = 3.0 mA
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