Número de pieza
B681
componentes Descripción
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New Jersey Semiconductor
B681 Hoja de datos - New Jersey Semiconductor
New Jersey Semiconductor
DESCRIPTION
• High Current Capability
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO=-150V(Min.)
APPLICATIONS
• For AF power amplifier use.
• Recommended for use in output stage of 80 watts power
amplifier.
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