B5819WS Hoja de datos - Galaxy Semi-Conductor
Fabricante

Galaxy Semi-Conductor
FEATURES
● Extremely low VF.
● Low stored change,majority carrier conduction.
● Low power loss/high efficient
APPLICATIONS
● For Use In Low Voltage, High Frequency Inverters.
● Free Wheeling, And Polarity Protection Applications.
Número de pieza
componentes Descripción
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Fabricante
SCHOTTKY BARRIER DIODE SCHOTTKY BARRIER TYPE
Toshiba
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Schottky barrier diode
( Rev : RevA )
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Schottky barrier diode
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Schottky barrier diode
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Schottky barrier diode
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Schottky barrier diode
( Rev : RevC )
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Schottky barrier diode
( Rev : 2009 )
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