B1260 Hoja de datos - Galaxy Semi-Conductor
Fabricante

Galaxy Semi-Conductor
FEATURES
● High breakdown voltage and high current. BVCEO=-80V,IC=-1A
● Good hFEVLinearity.
● Low VCE(sat).
● Complements the 2SD1898.
APPLICATIONS
● Epitaxial planar type PNP silicon transistor
Número de pieza
componentes Descripción
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Fabricante
Power Transistor(80V,1A)
Galaxy Semi-Conductor
Power Transistor (−80V, −1A) ( Rev : 2012 )
ROHM Semiconductor
Power Transistor (−80V, −1A) ( Rev : RevC )
ROHM Semiconductor
Power Transistor (80V, 1A)
ROHM Semiconductor
Power Transistor (−80V, −1A)
ROHM Semiconductor
Power Transistor (−80V, −1A)
ROHM Semiconductor
Power Transistor (-80V, -1A) ( Rev : 2009 )
ROHM Semiconductor
Power Transistor (80V, 1A) ( Rev : 2011 )
ROHM Semiconductor
Power Transistor (80V, 1A) ( Rev : Rev1_0 )
ROHM Semiconductor
Power Transistor (-80V, -1A) ( Rev : 2011 )
ROHM Semiconductor