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B1260 Hoja de datos - Galaxy Semi-Conductor

2SB1260 image

Número de pieza
B1260

componentes Descripción

Other PDF
  no available.

PDF
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page
4 Pages

File Size
176.3 kB

Fabricante
BILIN
Galaxy Semi-Conductor 

FEATURES
● High breakdown voltage and high current. BVCEO=-80V,IC=-1A
● Good hFEVLinearity.
● Low VCE(sat).
● Complements the 2SD1898.


APPLICATIONS
● Epitaxial planar type PNP silicon transistor

Page Link's: 1  2  3  4 

Número de pieza
componentes Descripción
Ver
Fabricante
Power Transistor(80V,1A)
PDF
Galaxy Semi-Conductor
Power Transistor (−80V, −1A) ( Rev : 2012 )
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Power Transistor (−80V, −1A) ( Rev : RevC )
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ROHM Semiconductor
Power Transistor (80V, 1A)
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ROHM Semiconductor
Power Transistor (−80V, −1A)
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ROHM Semiconductor
Power Transistor (−80V, −1A)
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ROHM Semiconductor
Power Transistor (-80V, -1A) ( Rev : 2009 )
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ROHM Semiconductor
Power Transistor (80V, 1A) ( Rev : 2011 )
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ROHM Semiconductor
Power Transistor (80V, 1A) ( Rev : Rev1_0 )
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ROHM Semiconductor
Power Transistor (-80V, -1A) ( Rev : 2011 )
PDF
ROHM Semiconductor

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