B1067 Hoja de datos - Toshiba
Fabricante

Toshiba
Micro-Moter Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications
• High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max)
(IC = −1 A, IB = −1 mA)
Número de pieza
componentes Descripción
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Fabricante
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR) ( Rev : 1999 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington Power Transistor)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON POWER TRANSISTOR)
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (DARLINGTON) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington)
Toshiba