Description
The AT49BV16X4(T) is 2.7- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 40 sectors for erase operations. The device is offered in 48-pin TSOP and 48-ball µBGA packages.

FEATUREs
• 2.7V to 3.3V Read/Write
• Access Time - 90 ns
• Sector Erase Architecture
   – Thirty 32K Word (64K Byte) Sectors with Individual Write Lockout
   – Eight 4K Word (8K Byte) Sectors with Individual Write Lockout
   – Two 16K Word (32K Byte) Sectors with Individual Write Lockout
• Fast Word Program Time - 20 µs
• Fast Sector Erase Time - 200 ms
• Dual Plane Organization, Permitting Concurrent Read while Program/Erase
   Memory Plane A: Eight 4K Word, Two 16K Word and Six 32K Word Sectors
   Memory Plane B: Twenty-four 32K Word Sectors
• Erase Suspend Capability
   – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector
• Low-power Operation
   – 25 mA Active
   – 10 µA Standby
• Data Polling, Toggle Bit, Ready/Busy for End of Program Detection
• Optional VPP Pin for Fast Programming
• RESET Input for Device Initialization
• Sector Program Unlock Command
• TSOP, CBGA, and µBGA Package Options
• Top or Bottom Boot Block Configuration Available