Description
The AT28LV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 54 mW. When the device is deselected, the CMOS standby current is less than 20 µA.
The AT28LV64B is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 64-byte page register to allow writing of up to 64-bytes simultaneously. During a write cycle, the addresses and 1 to 64-bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer. The end of a write cycle can be detected by DATA polling of I/O7. Once the end of a write cycle has been detected a new access for a read or write can begin.
Atmel’s 28LV64B has additional features to ensure high quality and manufacturability. The device utilizes internal error correction for extended endurance and improved data retention characteristics. A software data protection mechanism guards against inadvertent writes. The device also includes an extra 64-bytes of E2PROM for device identification or tracking.

FEATUREs
• Single 3.3V ± 10% Supply
• 3-Volt-Only Read and Write Operation
• Software-Protected Programming
• Low Power Dissipation
   15 mA Active Current
   20 µA CMOS Standby Current
• Fast Read Access Time − 200 ns
• Automatic Page Write Operation
   Internal Address and Data Latches for 64-Bytes
   Internal Control Timer
• Fast Write Cycle Times
   Page Write Cycle Time: 10 ms Maximum
   1 to 64-Byte Page Write Operation
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
   Endurance: 10,000 Cycles
   Data Retention: 10 Years
• JEDEC Approved Byte-Wide Pinout
• Commercial and Industrial Temperature Ranges