Description：
   This N-Channel and P-Channel MOSFET useadvanced trench Technology To provide excellent RDS(ON)， low gate charge. This device may be usedto form a level shifted high side switch, and for a host of other application.

FEATUREs：
N-Channel:V DS=20V,ID=6.8A,RDS(ON)<17mΩ @VGS=4.5V
P-Channel: V DS=-30V,ID=-5.1A,RDS(ON)<55@VGS=-10

1) Low gate charge.
2) Green device available.
3) Advanced high cell denity trench technology for ultra RDS(ON).
4) Excellent package for good heat dissipation.