AP40G120W Hoja de datos - Advanced Power Electronics Corp
Fabricante

Advanced Power Electronics Corp
Features
▼ Advanced IGBT Technology
▼ Low Saturation Voltage
VCE(sat)=3.15V@IC=40A
▼ Industry Standard TO-3P Package
Número de pieza
componentes Descripción
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Fabricante
N-channel Insulated-Gate Bipolar Transistor
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Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
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N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Advanced Power Electronics Corp
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Microsemi Corporation