Description：
   This N-Channel MOSFET uses advanced trench technology to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.

FEATUREs：
1) VDS=30V,ID=25A,RDS(ON)=18mΩ @VGS=10V
2) Improved dv/dt capability
3) Fast switching
4) 100% EAS Guaranteed
5) Green Device Available.