Número de pieza
AON5802A
componentes Descripción
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Alpha and Omega Semiconductor
AON5802A Hoja de datos - Alpha and Omega Semiconductor
Alpha and Omega Semiconductor
General Description
The AON5802 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON5802 is Pb-free (meets ROHS & Sony 259 specifications).
FEATUREs
VDS (V) = 30V
ID = 7.2A (VGS = 4.5V)
RDS(ON) < 20 mΩ (VGS = 4.5V)
RDS(ON) < 22 mΩ (VGS = 4.0V)
RDS(ON) < 24 mΩ (VGS = 3.1V)
RDS(ON) < 30 mΩ (VGS = 2.5V)
ESD Protected
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Fabricante
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
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