AO8818 Hoja de datos - SHENZHENFREESCALE
Fabricante

SHENZHENFREESCALE
General Description
The AO8818 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.AO8818 is Pb-free (meets ROHS & Sony 259 specifications)
FEATUREs
VDS (V) = 30V
ID = 7A (VGS = 10V)
RDS(ON) < 18mΩ (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 4.5V)
RDS(ON) < 21mΩ (VGS = 4V)
RDS(ON) < 24mΩ (VGS = 3.1V)
RDS(ON) < 27mΩ (VGS = 2.5V)
RDS(ON) < 58mΩ (VGS = 1.8V)
ESD Rating: 1500V HBM
Número de pieza
componentes Descripción
Ver
Fabricante
Common Drain Dual N-Channel Enhancement Mode Field Effect
ACE Technology Co., LTD.
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor ( Rev : 2003 )
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Alpha and Omega Semiconductor
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Unspecified
Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Unspecified