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AO4900 PDF
AO4900 Hoja de datos - Alpha and Omega Semiconductor
Fabricante

Alpha and Omega Semiconductor
General Description
The AO4900 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further.Standard Product AO4900 is Pb free (meets ROHS & Sony 259 specifications).
AO4900L is a Green Product ordering option.
AO4900 and AO4900L are electrically identical.
FEATUREs
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
SCHOTTKY
VDS (V) = 30V, IF = 3A, VF=0.5V@1A
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Fabricante
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Unspecified
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Unspecified
Effect Transistor with Schottky Diode Dual N-Channel Enhancement Mode Field
Unspecified
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor
Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode
Alpha and Omega Semiconductor