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AO4806 PDF
AO4806 Hoja de datos - Alpha and Omega Semiconductor
Fabricante

Alpha and Omega Semiconductor
General Description
The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.
Standard Product AO4806 is Pb-free (meets ROHS & Sony 259 specifications). AO4806L is a Green Product ordering option. AO4806 and AO4806L are electrically identical.
FEATUREs
• VDS (V) = 20V
• ID = 9.4A (VGS = 10V)
• RDS(ON) < 14mΩ (VGS = 10V)
• RDS(ON) < 15mΩ (VGS = 4.5V)
• RDS(ON) < 21mΩ (VGS = 2.5V)
• RDS(ON) < 30mΩ (VGS = 1.8V)
• ESD Rating: 2000V HBM
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componentes Descripción
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Fabricante
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Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics
Dual N-Channel Enhancement Mode Field Effect Transistor
Samhop Mircroelectronics