AFGY160T65SPD-B4 Hoja de datos - ON Semiconductor
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AFGY160T65SPD-B4
Fabricante

ON Semiconductor
Features
• AEC−Q101 Qualified and PPAP Capable
• Very Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 160 A
• Maximum Junction Temperature: TJ = 175°C
• Positive Temperature Co−Efficient
• Tight Parameter Distribution
• High Input Impedance
• 100% of the Parts are Dynamically Tested
• Short Circuit Ruggedness > 6 s @ 25°C
• Copacked with Soft, Fast Recovery Extremefast Diode
• This Device is Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Benefits
• Very Low Conduction and Switching Losses for a High Efficiency
Operation in Various Applications
• Rugged Transient Reliability
• Outstanding Parallel Operation Performance with Balance Current
Sharing
• Low EMI
APPLICATIONs
• Traction Inverter for HEV/EV
• Auxiliary DC/AC Converter
• Motor Drives
• Other Power−Train Applications Requiring High Power Switch
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