Description
The ACE13038A is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
● N-Channel
   30V/0.95A, RDS(ON)=550mΩ@VGS=4.5V
   30V/0.75A, RDS(ON)=650mΩ@VGS=2.5V
   30V/0.65A, RDS(ON)=850mΩ@VGS=1.8V
● Super high-density cell design for extremely low RDS(ON)
● Exceptional on-resistance and maximum DC current capability

APPLICATION
● Power Management in Note book
● Portable Equipment
● Battery Powered System
● DC/DC Converter
● Load Switch
● DSC
● LCD Display inverter