Número de pieza
A1015
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Toshiba
A1015(1996) Hoja de datos - Toshiba
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AUDIO FREQUENCY AMPLIFIER APPLICATIONS
LOW NOISE AMPLIFIER APPLICATIONS
• High Voltage and High Current
: VCEO= −50 V (Min.), IC= −150 mA (Max.)
• Excellent hFE Linearity
: hFE(2) = 80 (Typ.) at VCE= −6 V, IC= −150 mA
: hFE(IC= −0.1mA)/hFE(IC= −2 mA) = 0.95 (Typ.)
• Low Noise: NF = 0.2dB (Typ.) (f = 1kHz)
• Complementary to 2SC1815 (L)
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) ( Rev : 2001 )
Toshiba
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