900N20N Hoja de datos - Infineon Technologies
Fabricante

Infineon Technologies
Features
• Optimized for dc-dc conversion
• N-channel, normal level
• Excellent gate charge x R DS(on) product (FOM)
• Low on-resistance RDS(on)
• 150 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Halogen-free according to IEC61249-2-21
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componentes Descripción
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Fabricante
TO-3 POWER TRANSISTOR SOCKET
Unspecified
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OptiMOS™3 Power-Transistor
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OptiMOS™3 Power-Transistor
Infineon Technologies
OptiMOS™3 Power-Transistor
Infineon Technologies