Features
• Ultra Low On-Resistance
- rDS(ON) = 0.012Ω, VGS = 10V
- rDS(ON) = 0.016Ω, VGS = 4.5V
• Gate to Source Protection Diode
• Simulation Models
- Temperature Compensated PSPICE™ and SABER Electrical Models
- Spice and SABER Thermal Impedance Models
- www.intersil.com
• Peak Current vs Pulse Width Curve
• Transient Thermal Impedance Curve vs Board Mounting Area
• Switching Time vs RGS Curves
Número de pieza
componentes Descripción
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Fabricante
10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET
Fairchild Semiconductor
10A, 30V, 0.0135 Ohm, Single N-Channel, Logic Level Power MOSFET
Intersil
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Intersil
10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET
Fairchild Semiconductor
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Intersil
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Fairchild Semiconductor
10A, 30V, 0.016 Ohm, P-Channel, Logic Level, Power MOSFET
Intersil
14A, 30V, 0.0078 Ohm, N-Channel, Logic Level, Power MOSFET
Intersil
7.5A, 30V, 0.026 Ohm, N-Channel, Logic Level Power MOSFET
Intersil
42A, 30V, 0.025 Ohm, Logic Level, N-Channel Power MOSFET
Intersil