DESCRIPTION
The AM82731-012 device is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.

■ REFRACTORY/GOLD METALLIZATION
■ EMITTER SITE BALLASTED
■ LOW THERMAL RESISTANCE
■ INPUT/OUTPUT MATCHING
■ OVERLAY GEOMETRY
■ METAL/CERAMIC HERMETIC PACKAGE
■ POUT = 12 W MIN. WITH 6.0 dB GAIN