datasheetbank_Logo
búsqueda de Hoja de datos y gratuito Fichas de descarga
HOME  >>>  Unisonic Technologies  >>> 5N60 PDF

5N60 Hoja de datos - Unisonic Technologies

5N60 image

Número de pieza
5N60

componentes Descripción

Other PDF
  no available.

PDF
DOWNLOAD     

page
6 Pages

File Size
221.7 kB

Fabricante
UTC
Unisonic Technologies 

DESCRIPTION
The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.


FEATURES
* RDS(ON)< 2.2Ω@ VGS=10V, ID= 2.5A
* Ultra Low Gate Charge ( Typical 15 nC ) 
* Low Reverse Transfer Capacitance ( CRSS= Typical 6.5 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness5N60

Page Link's: 1  2  3  4  5  6 

Número de pieza
componentes Descripción
Ver
Fabricante
600V,5A N-Channel MOSFET
PDF
Alpha and Omega Semiconductor
5A, 600V N-CHANNEL MOSFET
PDF
Silan Microelectronics
600V, 5A N-Channel MOSFET ( Rev : 2008 )
PDF
Alpha and Omega Semiconductor
N-CHANNEL 600V 0.8OHM 5A DPAK MDMESH POWER MOSFET
PDF
STMicroelectronics
N-Channel Power MOSFET 600V, 5A, 2.34Ω, TO-220F-3FS
PDF
ON Semiconductor
N-CHANNEL 600V - 0.8Ω - 5A DPAK MDmesh™ Power MOSFET ( Rev : 2000 )
PDF
STMicroelectronics
600V / N-Channel Power MOSFET
PDF
ON Semiconductor
N-Channel Power MOSFET (5A, 900Volts)
PDF
Nell Semiconductor Co., Ltd
600V N-Channel Power MOSFET
PDF
TSC Corporation
600V N-Channel Power MOSFET
PDF
TSC Corporation

Share Link: GO URL

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]