Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1, H11B2, H11B3, H11B255, and TIL113 series consists of a photodarlington transistor optically coupled to a gallium arsenide Infrared-emitting diode in a 4-lead DIP package with bending option.

FEATUREs
• High isolation 5000 VRMS
• CTR flexibility available see order information
• DC input with transistor output
• Temperature range - 55 °C to 100 °C
• Regulatory Approvals
   ■ UL - UL1577 (E364000)
   ■ VDE - EN60747-5-5(VDE0884-5)
   ■ CQC – GB4943.1, GB8898
   ■ IEC60065, IEC60950

APPLICATIONs
• Switch mode power supplies
• Computer peripheral interface
• Microprocessor system interface