47NM60ND Hoja de datos - STMicroelectronics
Fabricante

STMicroelectronics
Description
This device is an N-channel Power MOSFET realized using the second generation of MDmesh™ technology known as FDmesh™ II. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
■ The worldwide best RDS(on)*area amongst the fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities.
APPLICATION
■ Switching applications
– Automotive
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Fabricante
N-channel 600 V, 0.075 Ω, 35 A MDmesh™ II Power MOSFET TO-247 ( Rev : 2009 )
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N-channel 600 V, 0.047 Ω typ., 51 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package
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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package ( Rev : 2016 )
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N-channel 600 V, 0.04 Ω typ., 65 A, MDmesh™ II Power MOSFET in a TO-247 package
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N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package
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N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFETs in a TO-247 package
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N-channel 650 V, 0.055 Ω typ., 49 A FDmesh™ II Power MOSFET (with fast diode) in a TO-247 package ( Rev : 2012 )
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