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3SK317 PDF
3SK317 Hoja de datos - Hitachi -> Renesas Electronics
Fabricante
Hitachi -> Renesas Electronics
Features
• Low noise characteristics;
(NF = 1.0 dB typ. at f = 200 MHz)
• High power gain characteristics ;
(PG = 27.6 dB typ. at f = 200 MHz)
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Fabricante
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET / VHF amplifier
Hitachi -> Renesas Electronics
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier
Renesas Electronics
Si Nch Dual Gate MOS FET UHF RF LOW NOISE Amplifier
Renesas Electronics
