Número de pieza
3SK252
componentes Descripción
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PDF
page
6 Pages
File Size
42.4 kB
Fabricante
NEC => Renesas Technology
3SK252 Hoja de datos - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• Low VDD Use : (VDS = 3.5 V)
• Driving Battery
• Low Noise Figure : NF1 = 2.0 dB TYP. (f = 470 MHz) NF2 = 0.8 dB TYP. (f = 55 MHz)
• High Power Gain : GPS = 19.0 dB TYP. (f = 470 MHz)
• Suitable for use as RF amplifier in CATV tuner.
• Automatically Mounting : Embossed Type Taping
• Package : 4 Pins Mini Mold
Número de pieza
componentes Descripción
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Fabricante
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD ( Rev : 2001 )
NEC => Renesas Technology
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMP. AND MIXER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
NEC => Renesas Technology
RF AMPLIFIER FOR UHF TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
NEC => Renesas Technology
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL GATE MES FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD
NEC => Renesas Technology
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