Número de pieza
3N150
componentes Descripción
Other PDF
PDF
page
22 Pages
File Size
664.4 kB
Fabricante
STMicroelectronics
3N150(2020) Hoja de datos - STMicroelectronics
STMicroelectronics
Description
These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
FEATUREs
• 100% avalanche tested
• Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
APPLICATIONs
• Switching applications
Número de pieza
componentes Descripción
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Fabricante
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