3KASMC10AHE357T Hoja de datos - Vishay Semiconductors
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3KASMC10AHE357T
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Vishay Semiconductors
FEATURES
• Junction passivation optimized design passivated anisotropic rectifier technology
• TJ = 185 °C capability suitable for high reliability and automotive requirement
• Available in uni-directional polarity only
• 3000 W peak pulse power capability with a 10/1000 μs waveform
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive, and telecommunication.
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