Número de pieza
3DD101B
componentes Descripción
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2 Pages
File Size
185.7 kB
Fabricante
Inchange Semiconductor
3DD101B(V2) Hoja de datos - Inchange Semiconductor
Inchange Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
• DC Current Gain-
: hFE= 20(Min.)@IC= 2A
• Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
• Designed for power amplifier,DC-DC converter and regulated
power supply applications.
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