Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

FEATUREs
■ High breakdown voltage VCEO = -120 V
■ Complementary to 2STC4467
■ Fast-switching speed
■ Typical ft = 20 MHz
■ Fully characterized at 125 °C

APPLICATIONs
■ Audio power amplifier