Description
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

FEATUREs
■ High breakdown voltage VCEO = -250 V
■ Complementary to 2ST5949
■ Typical ft = 25 MHz
■ Fully characterized at 125 °C

APPLICATIONs
■ Audio power amplifier