2SK3636 Hoja de datos - Panasonic Corporation
Fabricante

Panasonic Corporation
For high-speed switching
■ Features
• Avalanche energy capacity guaranteed: EAS > 20 mJ
• Gate-source surrender voltage VGSS = ±30 V guaranteed
• High-speed switching: tf = 50 ns
• No secondary breakdown
Número de pieza
componentes Descripción
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Fabricante
Silicon N-channel power MOSFET
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