2SK3408 Hoja de datos - NEC => Renesas Technology
Fabricante

NEC => Renesas Technology
DESCRIPTION
The 2SK3408 is a switching device which can be driven directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of dynamic clamp of relay and so on.
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance
RDS(on)1= 195 mΩMAX. (VGS= 10 V, ID= 0.5 A)
RDS(on)2= 250 mΩMAX. (VGS= 4.5 V, ID= 0.5 A)
RDS(on)3= 260 mΩMAX. (VGS= 4.0 V, ID= 0.5 A)
• Built-in G-S protection diode against ESD.
Número de pieza
componentes Descripción
Ver
Fabricante
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology