2SK3378ENTR-E Hoja de datos - Renesas Electronics
Número de pieza
2SK3378ENTR-E
Fabricante
Renesas Electronics
Features
• Low on-resistance
RDS= 2.7Ω typ. (VGS= 10 V, ID= 50 mA)
RDS= 4.7Ω typ. (VGS= 4 V, ID= 20 mA)
• 4 V gate drive device.
• Small package (CMPAK)
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Número de pieza
componentes Descripción
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Fabricante
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET High Speed Switching
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET HIGH SPEED SWITCHING
Hitachi -> Renesas Electronics
