2SK3228(2010) Hoja de datos - Renesas Electronics
Fabricante
Renesas Electronics
Features
• Low on-resistance
RDS (on) = 6 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Número de pieza
componentes Descripción
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Fabricante
Silicon N-Channel MOS FET High Speed Power Switching
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Silicon N-Channel MOS FET High Speed Power Switching
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Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N-Channel MOS FET High Speed Power Switching
Renesas Electronics
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Silicon N Channel MOS FET High Speed Power Switching ( Rev : 2006 )
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
Silicon N Channel MOS FET High Speed Power Switching
Renesas Electronics
