2SK3175A Hoja de datos - Hitachi -> Renesas Electronics
Fabricante
Hitachi -> Renesas Electronics
Features
• High power output, High gain, High efficiency
P1dB = 110 W, PG = 16.0 dB, ηD = 60 % (at P1dB) typ. (f = 860MHz)
• Compact package
Page Link's:
1
2
3
4
5
6
7
8
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier ( Rev : 2007 )
Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
