DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Low On-State Resistance
RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A)
• Low Ciss : Ciss = 920 pF TYP.
• Built-in Gate Protection Diode
• Isolated TO-220 package