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2SK2981 Hoja de datos - NEC => Renesas Technology

2SK2981 image

Número de pieza
2SK2981

componentes Descripción

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page
8 Pages

File Size
57.7 kB

Fabricante
NEC
NEC => Renesas Technology 

This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.


FEATURES
• Low on-resistance
RDS(on)1= 27 mΩ(MAX.) (VGS= 10 V, ID= 10 A)
RDS(on)2= 40 mΩ(MAX.) (VGS= 4.5 V, ID= 10 A)
RDS(on)3= 50 mΩ(MAX.) (VGS= 4 V, ID= 10 A)
• Low Ciss: Ciss= 860 pF (TYP.)
• Built-in gate protection diode

2SK2981

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