Número de pieza
2SK2981
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8 Pages
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NEC => Renesas Technology
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Low on-resistance
RDS(on)1= 27 mΩ(MAX.) (VGS= 10 V, ID= 10 A)
RDS(on)2= 40 mΩ(MAX.) (VGS= 4.5 V, ID= 10 A)
RDS(on)3= 50 mΩ(MAX.) (VGS= 4 V, ID= 10 A)
• Low Ciss: Ciss= 860 pF (TYP.)
• Built-in gate protection diode