2SK2595 Hoja de datos - Renesas Electronics
Fabricante
Renesas Electronics
Features
• High power output, High gain, High efficiency
PG = 7.8 dB, Pout = 5.37 W, ηD = 50% min. (f = 836.5 MHz)
• Compact package capable of surface mounting
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Número de pieza
componentes Descripción
Ver
Fabricante
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier ( Rev : 2007 )
Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Hitachi -> Renesas Electronics
Silicon N-Channel MOS FET UHF Power Amplifier
Renesas Electronics
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
Hitachi -> Renesas Electronics
