Número de pieza
2SJ619
componentes Descripción
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Toshiba
2SJ619(2006) Hoja de datos - Toshiba
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Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 7.7 S (typ.)
• Low leakage current: IDSS = −100 µA (max) (VDS = −100 V)
• Enhancement model: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV) ( Rev : 1998 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) ( Rev : 1999 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) ( Rev : 2002 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV) ( Rev : 1998 )
Toshiba
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