2SJ599 Hoja de datos - NEC => Renesas Technology
Fabricante

NEC => Renesas Technology
DESCRIPTION
The 2SJ599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES
• Low on-state resistance:
RDS(on)1= 75 mΩMAX. (VGS= –10 V, ID= –10 A)
RDS(on)2= 111 mΩMAX. (VGS= –4.0 V, ID= –10 A)
• Low input capacitance:
Ciss= 1300 pF TYP. (VDS= –10 V, VGS= 0 V)
• Built-in gate protection diode
• TO-251/TO-252 package
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Fabricante
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
NEC => Renesas Technology
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
Renesas Electronics
SWITCHING P-CHANNEL POWER MOS FET
NEC => Renesas Technology