DESCRIPTION
   This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.

FEATURES
• Super Low On-State Resistance
   RDS(on)1 = 30 mΩ MAX. (VGS = –10 V, ID = –15 A)
   RDS(on)2 = 56 mΩ MAX. (VGS = –4 V, ID = –15 A)
• Low Ciss Ciss = 4120 pF TYP.
• Built-in Gate Protection Diode