Número de pieza
2SJ494
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NEC => Renesas Technology
2SJ494 Hoja de datos - NEC => Renesas Technology
NEC => Renesas Technology
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
• Super Low On-State Resistance
RDS(on)1= 50 m:Max. (VGS= –10 V, ID= –10 A)
RDS(on)2= 88 m:Max. (VGS= –4 V, ID= –10 A)
• Low Ciss Ciss= 2360 pF Typ.
• Built-in Gate Protection Diode
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