2SJ380 Hoja de datos - Toshiba
Fabricante

Toshiba
Relay Drive, DC-DC Converter and Motor Drive Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON)= 0.15 Ω(typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS= −100 μA (max) (VDS= −100 V)
• Enhancement mode: Vth= −0.8 to −2.0 V (VDS= −10 V, ID= −1 mA)
Número de pieza
componentes Descripción
Ver
Fabricante
Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
Toshiba
Silicon P Channel MOS Type (L2-π-MOSV) Field Effect Transistor
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) ( Rev : 1999 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) ( Rev : 2006 )
Toshiba